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|Title||Thin film characterization using rotating polarizer analyzer ellipsometer with a speed ratio 1: 3|
In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1: 3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200-800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.
|Published in||J. Electromagn. Anal. Appl|
|Publisher||Scientific Research Publishing, Inc,|
|Item link||Item Link|
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|Taya, Sofyan A._45.pdf||367.7Kb|