Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12358/26409
Title | Effect of Trap-assisted Tunneling (TAT) on the Performance of Homojunction Mid-Infrared Photodetectors based on InAsSb. P. Chakrabarti, A. Gawarikar, V. Mehta, and D. Garg … |
---|---|
Untitled | |
Abstract |
Theoretical investigations have been carried out to explore the effect of trap-assisted tunneling on the performance characteristics of an InAsSb p +-n homojunction photodetector supposed to be grown on InAs substrate. Both electrical and optical characterizations of the device have been simulated for operation of the device in the mid-infrared region (2.5-4.0 m). The study revealed that the dark current of the photodetector under reverse bias is dominated by trap-assisted tunneling component of current and this causes the detectivity of the device to decrease at high reverse bias. It was concluded that by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias. |
Type | Journal Article |
Date | 2006 |
Published in | Journal of Microwaves and Optoelectronics |
Series | Volume: 5, Number: 1 |
Citation | |
Item link | Item Link |
License | ![]() |
Collections | |
Files in this item | ||
---|---|---|
144-270-1-SM.pdf | 243.2Kb |