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http://hdl.handle.net/20.500.12358/26031
TitleFINITE DIFFERENCE TIME DOMAIN SIMULATION OF LIGHT TRAPPING IN A GaAs COMPLEX STRUCTURE
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Abstract

We theoretically investigate the effects of Gallium Arsenide (GaAs) as an absorbing material in a complex waveguide structure model. Finite Difference Time Domain (FDTD) method is used to discretize the Maxwell’s curl equations for the proposed structure. A comparison between Amorphous Silicon (a-Si) and GaAs as absorbing materials is presented through the computation of the absorption spectra. It has been realized that GaAs is still a promising candidate to be used in the waveguide structure models through maximizing the absorption and minimizing the reflectance in the proposed waveguide structure.

Authors
Shabat, Mohammed M.
El-Samak, Nadara S
Schaadt, Daniel M
Authority, Palestinian
TypeJournal Article
Date2018
Subjects
gallium arsenide (gaas)
surface plasmons
finite difference time domain method (fdtd)
thin film complex structure
Published inRomanian Reports in Physics
SeriesVolume: 70
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  • Staff Publications- Faculty of Science [1030]
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The institutional repository of the Islamic University of Gaza was established as part of the ROMOR project that has been co-funded with support from the European Commission under the ERASMUS + European programme. This publication reflects the views only of the author, and the Commission cannot be held responsible for any use which may be made of the information contained therein.

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The institutional repository of the Islamic University of Gaza was established as part of the ROMOR project that has been co-funded with support from the European Commission under the ERASMUS + European programme. This publication reflects the views only of the author, and the Commission cannot be held responsible for any use which may be made of the information contained therein.

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