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|Title||FINITE DIFFERENCE TIME DOMAIN SIMULATION OF LIGHT TRAPPING IN A GaAs COMPLEX STRUCTURE|
We theoretically investigate the effects of Gallium Arsenide (GaAs) as an absorbing material in a complex waveguide structure model. Finite Difference Time Domain (FDTD) method is used to discretize the Maxwell’s curl equations for the proposed structure. A comparison between Amorphous Silicon (a-Si) and GaAs as absorbing materials is presented through the computation of the absorption spectra. It has been realized that GaAs is still a promising candidate to be used in the waveguide structure models through maximizing the absorption and minimizing the reflectance in the proposed waveguide structure.
|Published in||Romanian Reports in Physics|
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|Shabat, Mohammed M._151.pdf||496.0Kb|