Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12358/26031
Title | FINITE DIFFERENCE TIME DOMAIN SIMULATION OF LIGHT TRAPPING IN A GaAs COMPLEX STRUCTURE |
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Untitled | |
Abstract |
We theoretically investigate the effects of Gallium Arsenide (GaAs) as an absorbing material in a complex waveguide structure model. Finite Difference Time Domain (FDTD) method is used to discretize the Maxwell’s curl equations for the proposed structure. A comparison between Amorphous Silicon (a-Si) and GaAs as absorbing materials is presented through the computation of the absorption spectra. It has been realized that GaAs is still a promising candidate to be used in the waveguide structure models through maximizing the absorption and minimizing the reflectance in the proposed waveguide structure. |
Type | Journal Article |
Date | 2018 |
Published in | Romanian Reports in Physics |
Series | Volume: 70 |
Citation | |
Item link | Item Link |
License | ![]() |
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Files in this item | ||
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Shabat, Mohammed M._151.pdf | 496.0Kb |