Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12358/24639
Title | Characteristics of Si-Solar Cell (PV) Waveguide Structure Using Transfer Matrix Method |
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Untitled | |
Abstract |
In this work, the characteristics of a Si-solar cell (PV) model is studied. The proposed model is a four layer system with an ultra-thin film of Fe-InGaAsPlaid above Silicon (Si) substrate and covered by AlON layer that is exposed to air directly. The efficiency is measured by the reflectance power (R) and transmittance power (T). R and T are derived by using the transfer matrix method for both TE and TM modes. The total reflectance (Ravg) and the total transmittance (Tavg) are taken as the average value for the TE and TM modes. Ravg and Tavg are plotted versus the wavelength at different values for AlON layer thickness l1 and Fe-InGaAsP layer thickness l2 using Maple. The result shows that the minimum value of Ravg is shifted toward higher wavelengths with increasing l1. The minimum of Ravg is almost zero while the rest of the spectrum is less than 0.25% which is lower than any previous results. We also noticed … |
Type | Journal Article |
Date | 2017 |
Published in | Promising Electronic Technologies (ICPET), 2017 International Conference on |
Publisher | IEEE |
Citation | |
Item link | Item Link |
License | ![]() |
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Files in this item | ||
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IEEEICPET.2017.24.pdf | 350.1Kb |