Ultra-Wideband and Low Noise Transimpedance Amplifier

Abstract

We present a new transimpedance amplifier (TIA) design possessing an improved bandwidth. This TIA employs a parallel combination of two series resonate circuits with different resonate frequencies on the conventional regulated common gate (RGC) architecture. In the proposed TIA, we employ the capacitance degeneration and series inductive peaking for pole-zero elimination. We implemented the layout of proposed TIA in a 0.18-µm CMOS process, where a 100-fF photodiode is considered. Our post-simulation test results show that the TIA provides 53-dBΩ transimpedance gain and 24-pA/ input referred noise. The designed TIA consumes 11 mW from a 1.8-V supply, and its group-delay variation is 5-ps over 13-GHz 3-dB bandwidth.