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    • Tunable External Cavity Semiconductor Lasers.

      Ashour, HS; Al-Sahhar, Zeyad I; Shabat, Mohammed M.; Buttiker, M; Chow, K; Sargent, M Iii; Chuang, SL; Durate, FJ; Piper, JA; Hong, J; Kim, H; Makino, T; Jerman, JH; Grade, JD; Berger, JD; Heanue, JH; Landauer, R; Littman, MG; Metcalf, HJ; Mason, B; Fish, GA; Den-Baars, SP; Coldren, LA; Moskalets, M; Peterson, OG; Tuccio, SA; Snavely, BB; Schafer, FP; Schmidt, W; Volze, J; Shoshan, I; Danon, NN; Oppenheim, UP; Sorokin, PP; Lankard, JR; Tang, CS; Tan, YH; Chu, CS; Vakhshoori, D; Tayebati, P; Lu, CC; Azimi, M; Wang, P; Zhou, JH; Canoglu, E; Verdeyen, JT; Wenjun, L; Reichl, LE; Yariv, A; Zorabedian, P (orgz, 2005)
      In this study, we propose a new method to tune the semiconductor laser lasing frequency and reducing the laser linewidth using an external deriving field. We redeveloped Floquet S-matrix which determines the transmission ...